METHOD OF FORMING PHOTOMASK, LAYOUT PATTERN AND SYSTEM FOR PATTERNING SEMICONDUCTOR SUBSTRATE BY USING PHOTOMASK
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
Oct 17, 2023
filing date -
Oct 17, 2023
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Abstract
A method of forming a photomask includes: providing a target pattern; generating a first offset pattern according to the target pattern and a first offset value; generating a second offset pattern according to the first offset pattern and a second offset value; operating the first offset pattern and the second offset pattern with a Boolean operation to obtain a first assist feature; and outputting the target pattern and the first assist feature to form the photomask. The manufacturing time of the resulting photomask can be shortened and fidelity of patterns produced by the photomask can be improved so as to facilitate transfer of the target pattern to the semiconductor substrate precisely.
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