REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND MANUFACTURING METHOD THEREFOR
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
Sep 3, 2024
filing date -
Sep 3, 2024
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Abstract
A reflective mask blank for EUV lithography, the reflective mask blank including: a substrate; a multilayer reflective film configured to reflect EUV light; and an absorption layer configured to absorb EUV light, in this order from a substrate side, in which the absorption layer includes a first absorption film and a second absorption film in this order from the substrate side, the absorption layer has a refractive index for EUV light having a wavelength of 13.5 nm of 0.95 or less, and the first absorption film is more easily chemically dry etched than the second absorption film.
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