PIEZOELECTRIC EPITAXIALLY GROWN PSEUDOSUBSTRATE, USE AND PROCESS FOR PREPARING SUCH A PSEUDOSUBSTRATE
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United States of America
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Dec 26, 2024
app pub date -
Jul 21, 2022
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Jul 21, 2022
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Abstract
The present invention relates to a piezoelectric, epitaxially grown pseudosubstrate comprising a silicon wafer (100) having two parallel faces, and a thin layer of α-quartz (100) grown epitaxially on one of the faces of said wafer, said thin α-quartz layer (100) exhibiting a uniform crystallization with a mosaicity around the peak (100) of the quartz of between 6° and 1° and a thickness of between 100 nm and 1 μm. The present invention also relates to a process for fabricating such a pseudosubstrate, and to the use thereof for producing piezoelectric membranes.
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