METHOD OF FORMING A LAYER BY ALD
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United States of America
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Issued Date -
Dec 26, 2024
app pub date -
Jun 20, 2024
filing date -
Jun 20, 2024
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Abstract
A method of forming a layer of a material on one or more substrates by ALD is disclosed. Embodiments of the presently described method comprise performing a plurality of deposition cycles comprising at least two precursors pulses with intervening purge pulses to form the layer of the material on the one or more substrates. During each deposition cycle, a ratio of the process chamber pressure during each precursor pulse of the at least two precursor pulses to the process chamber pressure during an intervening purge pulse is equal or different from one another.
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