COMPOSITION FOR MANUFACTURING SEMICONDUCTOR, METHOD FOR TREATING OBJECT TO BE TREATED, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
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United States of America
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Dec 26, 2024
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Aug 19, 2024
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Aug 19, 2024
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Abstract
An object of the present invention is to provide a composition for manufacturing a semiconductor, which is capable of selectively removing silicon in a case of being applied to an object to be treated containing silicon-germanium and silicon; a method for treating an object to be treated using the composition for manufacturing a semiconductor; and a method for manufacturing a semiconductor element using the composition for manufacturing a semiconductor.
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