SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
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United States of America
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Issued Date -
Dec 19, 2024
app pub date -
May 7, 2024
filing date -
May 7, 2024
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Abstract
A semiconductor device including gate electrodes stacked and spaced apart from each other in a first direction, extending by different lengths in a second direction on the second region, and each including a pad region having an upper surface exposed upwardly in the second region and a stack region other than the pad region, the gate electrodes including a first gate electrode and a second gate electrode below the first gate electrode, a first contact plug insulating layer on interlayer insulating layers in the pad region of the first gate electrode, surrounding a gate contact plug, and vertically overlapping the first gate electrode, second contact plug insulating layers alternating with the interlayer insulating layers below the pad region of the first gate electrode and surrounding the gate contact plug may be provided.
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