SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Dec 19, 2024
app pub date -
Feb 23, 2024
filing date -
Feb 23, 2024
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a lower pattern extending in a first direction, a plurality of wire patterns spaced apart from the lower pattern in a second direction on the lower pattern, and a gate electrode surrounding the plurality of wire patterns and extending in a third direction, on the lower pattern. Each of the plurality of wire patterns includes a transition metal dichalcogenide (TMD) material. Each of the plurality of wire patterns includes a pair of first areas protruding from sidewalls of the gate electrode in the first direction and a second area between the first areas. A phase of the first area is different from a phase of the second area.
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