SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Dec 19, 2024
app pub date -
Aug 23, 2024
filing date -
Aug 23, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor device includes a gate structure on a substrate, a first spacer on sidewalls of gate structure, a second spacer on sidewalls of the first spacer, a polymer block adjacent to the first spacer and on a corner between the gate structure and the substrate, an interfacial layer under the polymer block, and a source/drain region adjacent to two sides of the first spacer. Preferably, the polymer block is surrounded by the first spacer, the interfacial layer, and the second spacer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully