Importance

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Abstract

A semiconductor device includes a substrate insulating layer having a lower insulating pattern protruding from an upper surface of the substrate insulating layer and extending in a first direction; a semiconductor pattern extending on the lower insulating pattern of the substrate insulating layer in the first direction; a plurality of channel layers stacked on the semiconductor pattern and spaced apart from each other in a direction perpendicular to the upper surface of the substrate insulating layer; a gate structure intersecting the semiconductor pattern, extending in a second direction crossing the first direction, and surrounding the plurality of channel layers; first and second source/drain regions disposed on the semiconductor pattern on both sides of the gate structure; and an intermediate insulating pattern disposed between the lower insulating pattern and the semiconductor pattern and having a thickness equal to or less than a distance between the plurality of channel layers.

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First Claim