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APP PUB NO 20240421159A1
SERIAL NO

18814858

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Abstract

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The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

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Patent Owner(s)

Patent OwnerAddress
JAPAN DISPLAY INCTOKYO 105-0003

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ISHII, Yoshinori Tokyo, JP 83 787
MIYAKE, Hidekazu Tokyo, JP 85 528
SUZUMURA, Isao Tokyo, JP 96 420
WATABE, Kazufumi Tokyo, JP 49 194
YAMAGUCHI, Yohei Tokyo, JP 95 212

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