Importance

Loading Importance Indicators...

Abstract

This disclosure relates to a semiconductor die and a method for fabrication of a semiconductor die. The disclosed semiconductor die comprises a substrate having a drain-cathode region, a plurality of trenches and mesas, a first anode trench, and a first floating closed loop mesa surrounding the first anode trench. The semiconductor die further comprises a first anode region under the first anode trench, a plurality of source regions extending from top surfaces into the plurality of mesas, and a plurality of gate regions extending along a bottom surface and portions of sidewalls of each of the plurality of trenches. The first floating closed loop mesa electrically isolates the first anode region from the plurality of gate regions, and the first anode region electrically couples to the plurality of source regions to integrate an anti-parallel diode cell within vertical junction field-effect transistors (JFETs).

Loading the Abstract Image...

First Claim