INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME
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United States of America
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Issued Date -
Dec 19, 2024
app pub date -
Jun 14, 2023
filing date -
Jun 14, 2023
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Abstract
A semiconductor device includes a substrate, a heat dissipation dielectric layer, a conductive interconnect structure, and a blocking dielectric layer. The heat dissipation dielectric layer is disposed on the substrate and has a thermal conductivity greater than 10 W/mK. The conductive interconnect structure is disposed in the heat dissipation dielectric layer. The blocking dielectric layer is disposed in the heat dissipation dielectric layer to isolate the conductive interconnect structure from the heat dissipation dielectric layer.
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