MODIFICATION OF METAL-CONTAINING SURFACES IN HIGH ASPECT RATIO PLASMA ETCHING
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United States of America
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Dec 19, 2024
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Nov 2, 2022
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Nov 2, 2022
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Abstract
Methods and apparatus for etching high aspect ratio features in substrates having mixed material stacks are provided herein. Methods involve using low plasma power, high chamber pressure, and/or low temperature while exposing the substrate to a metal-containing additive gas during etching using a fluorocarbon gas.
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