SYSTEMS AND METHODS FOR IMPROVING MECHANICAL STRENGTH OF LOW DIELECTRIC CONSTANT MATERIALS
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United States of America
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Issued Date -
Dec 19, 2024
app pub date -
Jun 14, 2023
filing date -
Jun 14, 2023
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Abstract
Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.
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