METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL
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United States of America
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Dec 19, 2024
app pub date -
Jun 16, 2023
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Jun 16, 2023
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Abstract
A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.
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