MEMORY DEVICE HAVING SUPPORT STRUCTURE

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United States of America

APP PUB NO 20240420738A1
SERIAL NO

18504905

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Abstract

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A memory device includes: a stack structure; first support structures penetrating the stack structure, the first support structures being spaced apart from each other in a first direction; a first protrusion pattern penetrating the stack structure, the first protrusion pattern being spaced apart from one of the first support structures in a second direction; a first outer support structure penetrating the stack structure, the first outer support structure extending along the first direction from the first protrusion pattern; and a central support structure penetrating the stack structure, the central support structure extending in the second direction in a region between the first support structures, the central support structure being in contact with the first outer support structure.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Jae Ho Icheon-si Gyeonggi-do, KR 207 1601

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