Importance

Loading Importance Indicators...

Abstract

A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on a design pattern of a layout and forming a photoresist pattern on a substrate using a photomask manufacture based the corrected layout. The performing of the OPC includes analyzing a cell hierarchy to choose a representative cell in the layout, dividing the design pattern in the representative cell into a plurality of segments including first segments, choosing a first unique segment, which represents the first segments, from the plurality of segments, generating a first correction bias of the first unique segment, applying the first correction bias to all of the first segments to generate a correction pattern, and applying a correction result of the representative cell to other cells that are included in the layout and are of a same type as the representative cell.

Loading the Abstract Image...

First Claim