PHASE SHIFT MASK AND METHOD FOR MANUFACTURING PHASE SHIFT MASK

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United States of America

APP PUB NO 20240419064A1
SERIAL NO

18727041

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

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Patent Owner(s)

Patent OwnerAddress
TEKSCEND PHOTOMASK CORP1-5-2 HIGASHI-SHIMBASHI MINATO-KU TOKYO 1057133 ?1057133

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KOJIMA, Yosuke Tokyo, JP 18 217
KUROKI, Kyoko Tokyo, JP 10 13
MATSUI, Kazuaki Tokyo, JP 29 372
YONEMARU, Naoto Tokyo, JP 2 0

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