STORAGE ELEMENT AND STORAGE DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240415033A1
SERIAL NO

18697631

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A storage element includes a first electrode, a resistance change layer, a first interface layer, and a first heat shield layer. The resistance change layer is formed on the first electrode, contains at least tellurium, antimony, and germanium, and is changeable in a resistance value. The first interface layer is formed between the first electrode and the resistance change layer. The first heat shield layer is formed between the first electrode and the first interface layer, has electrical conductivity, contains boron, and blocks heat transfer from the resistance change layer.

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Patent Owner(s)

Patent OwnerAddress
SONY SEMICONDUCTOR SOLUTIONS CORPORATION4-14-1 ASAHI-CHO ATSUGI-SHI KANAGAWA 2430014 ?2430014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aratani, Katsuhisa Kanagawa, JP 128 1644
Mizuguchi, Tetsuya Kanagawa, JP 53 822
Nakayama, Tetsuo Kanagawa, JP 22 270
Ohba, Kazuhiro Tokyo, JP 69 905
Sei, Hiroaki Kanagawa, JP 29 169

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