SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America
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Dec 12, 2024
app pub date -
Aug 21, 2024
filing date -
Aug 21, 2024
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Abstract
A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a metal interconnection on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.
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