SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
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United States of America
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Issued Date -
Dec 12, 2024
app pub date -
Dec 18, 2023
filing date -
Dec 18, 2023
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Abstract
A semiconductor device includes: a semiconductor substrate; an epitaxial layer disposed on the substrate; a plurality of trenches formed in the epitaxial layer; a shield insulating layer formed inside the plurality of trenches; a shield electrode surrounded by the shield insulating layer and disposed inside the plurality of trenches; an inter-electrode insulating layer formed on top of the shield insulating layer and the shield electrode; a gate insulating layer disposed on the inter-electrode insulating layer; a gate electrode disposed on the gate insulating layer; a body region formed on an upper portion of the epitaxial layer located between the plurality of trenches; a source region formed on the body region; an inter-layer insulating layer formed on the gate electrode and the source region; and a body contact region in contact with the source region and the body region.
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