BIPOLAR TRANSISTOR
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United States of America
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Issued Date -
Dec 12, 2024
app pub date -
Nov 16, 2021
filing date -
Nov 16, 2021
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Abstract
A hetero-junction bipolar transistor includes an n-type collector layer made of InGaN, a base layer formed on the collector layer and made of GaN, and an emitter layer formed on the base layer and made of a nitride semiconductor containing Al, in which the collector layer, the base layer, and the emitter layer are formed in a state in which the principal surface is a group V polar plane. The base electrode can be formed in contact with the upper part of the base layer around the emitter layer formed in a mesa shape.
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