TERMINATION STRUCTURES FOR MOSFETS
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United States of America
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Issued Date -
Dec 12, 2024
app pub date -
Sep 11, 2023
filing date -
Sep 11, 2023
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Abstract
Shielded gate semiconductor devices are disclosed for use in high power applications such as electric vehicles and industrial applications. The devices are formed as mesa (106)/trench (400) structures in which shielded gate electrodes are formed in the trenches. Various trench structures (400, 500, 600, 700) are presented that include tapered portions (401) and end tabs (502, 602, 702, 802) that can be beneficial in managing the distribution of electric charge and associated electric fields. The tapered trenches (400) can be used to increase and stabilize breakdown voltages in a termination region (104) of a semiconductor die (100).
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