STACKED TRANSISTOR PHYSICALLY UNCLONABLE FUNCTION

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240413100A1
SERIAL NO

18509567

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An IC device includes a first and second stacked transistor structures including respective first and second and third and fourth transistors in a semiconductor substrate, first and second bit lines and a word line on one of a front or back side of the semiconductor substrate, and a power supply line on the other of the front or back side. The first transistor includes a source/drain (S/D) terminal electrically connected to the first bit line, a S/D terminal electrically connected to a S/D terminal of the second transistor, and a gate electrically connected to the word line, the third transistor includes a S/D terminal electrically connected to the second bit line, a S/D terminal electrically connected to a S/D terminal of the fourth transistor, and a gate electrically connected to the word line, and the second and fourth transistors include S/D terminals electrically connected to the power supply line.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHAN, Wei Min Hsinchu, TW 82 475
CHOU, Chun-Tse Hsinchu, TW 4 16
HUANG, Chien Hui Hsinchu, TW 5 0
LIN, Chien-Chen Hsinchu, TW 63 250
TU, Yung-Ning Hsinchu, TW 6 13

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation