INTERCONNECT STRUCTURE HAVING HEAT DISSIPATION CAPABILITY AND METHOD FOR MANUFACTURING THE SAME
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United States of America
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Issued Date -
Dec 12, 2024
app pub date -
Jun 12, 2023
filing date -
Jun 12, 2023
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Abstract
A semiconductor structure includes a base structure including a substrate and a device unit disposed on a front surface of the substrate, a front dielectric portion disposed on the front surface to cover the device unit, a front conductive layer disposed in the front dielectric portion and connected to the device unit, a back dielectric unit disposed on a back surface of the substrate opposite to the front surface and including at least one first part which includes a first dielectric portion having a thermal conductivity which is greater than that of the front dielectric portion, and a back conductive unit which is disposed in the back dielectric unit and connected to the device unit, and which includes at least one first conductive layer disposed in the at least one first part.
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