HEAT SINK FOR STACKED MULTI-GATE DEVICE
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United States of America
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Issued Date -
Dec 12, 2024
app pub date -
Sep 7, 2023
filing date -
Sep 7, 2023
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Abstract
Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a semiconductor substrate, a high-Kappa dielectric layer disposed on the semiconductor substrate, a first plurality of nanostructures disposed over the high-Kappa dielectric layer, a middle dielectric layer disposed over the first plurality of nanostructures, a second plurality of nanostructures over the middle dielectric layer, a first gate structure wrapping around the first plurality of nanostructures, a second gate structure wrapping around the second plurality of nanostructures. The high-Kappa dielectric layer includes metal nitride, metal oxide, silicon carbide, graphene, or diamond.
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