METHOD OF FORMING EPITAXIAL SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America
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Dec 12, 2024
app pub date -
Sep 1, 2022
filing date -
Sep 1, 2022
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Abstract
The present disclosure provides a method for forming an epitaxial semiconductor layer including a step for providing a crystallization base member having a single crystal structure; a step for forming a semiconductor layer having one of an amorphous structure and a polycrystalline structure in contact with the crystallization base member; a step for forming a heating layer which may be heated by a laser on the semiconductor layer; a step for melting the semiconductor layer by heating the heating layer by irradiating a laser to the heating layer; and a step for forming a single crystallized epitaxial semiconductor layer from the semiconductor layer through single crystallization of the semiconductor layer according to the single crystalline structure of the crystallization base member by cooling the molten semiconductor layer.
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