LOW-VOLTAGE ELECTRON BEAM CONTROL OF CONDUCTIVE STATE AT A COMPLEX-OXIDE INTERFACE
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United States of America
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Dec 12, 2024
app pub date -
Dec 22, 2023
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Dec 22, 2023
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Abstract
Described is a method comprising directing an ultra-low voltage electron beam to a surface of a first insulating layer. The first insulating layer is disposed on a second insulating layer. The method includes modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property.
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