ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS FOR FORMING THE SAME
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United States of America
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Issued Date -
Dec 5, 2024
app pub date -
May 31, 2023
filing date -
May 31, 2023
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Abstract
A memory device is disclosed. The memory device includes a memory cell comprising: a transistor; and a plurality of pairs of resistors coupled to the transistor in series, each of the pairs of resistors including a first resistor and a second resistor. The transistor is formed along a major surface of a substrate. At least a first one of the pairs of resistors are formed in a first one of a plurality of metallization layers disposed above the transistor. At least a second one of the pairs of resistors are formed in a second one of the plurality of metallization layers, the second metallization layer being disposed above the first metallization layer.
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