Importance

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Abstract

A semiconductor may include a substrate including a first active region and a second active region, an element isolation film on the substrate exposing the first active region and the second active region, a silicon germanium film on the first active region of the substrate, a first gate insulating film on the silicon germanium film and contacting the silicon germanium film, a first gate electrode on the first gate insulating film, a source/drain region in the substrate and on both sides of the first gate electrode, a second gate insulating film on the second active region of the substrate and contacting the substrate, and a second gate electrode on the second gate insulating film. A height from a lowest portion of the element isolation film to an upper face of the substrate may be different in the first active region compared to the second active region.

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First Claim