LIGHT EMITTING DIODES CONTAINING EPITAXIAL LIGHT CONTROL FEATURES
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United States of America
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Dec 5, 2024
app pub date -
Oct 28, 2022
filing date -
Oct 28, 2022
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Abstract
A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on an epitaxial layer of a light emitting device such as a light emitting diode. The light extraction or guiding structures are fabricated on the epitaxial layer using an epitaxial lateral overgrowth (ELO) technique. The epitaxial light control features can have many different shapes and can be fabricated with standard processing techniques, making them highly manufacturable at costs similar to standard processing techniques.
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