SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER LAMINATE STRUCTURE AND A METHOD FOR MANUFACTURING THEREOF
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United States of America
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Dec 5, 2024
app pub date -
May 15, 2024
filing date -
May 15, 2024
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Abstract
There is described a semiconductor device comprising an SiC body with a gate structure comprising a gate dielectric with a specific multilayer laminate structure including alternating layers of a first dielectric material and of a second dielectric material having a dielectric constant of 4 or higher. There is further described a method for manufacturing such a semiconductor device including an SiC body as mentioned before.
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