SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATING FILM PROVIDED IN TRENCH
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United States of America
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Dec 5, 2024
app pub date -
Aug 13, 2024
filing date -
Aug 13, 2024
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Abstract
At a front surface of a silicon carbide base, an n−-type drift layer, a p-type base layer, a first n+-type source region, a second n+-type source region, and a trench that penetrates the first and the second n+-type source regions and the p-type base layer and reaches the n-type region are provided. In the trench, the gate electrode is provided via a gate insulating film, an interlayer insulating film is provided in the trench on the gate electrode.
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