IMAGE SENSOR AND MANUFATURING METHOD THEREOF
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United States of America
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Issued Date -
Dec 5, 2024
app pub date -
Jan 8, 2024
filing date -
Jan 8, 2024
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Abstract
The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.
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