FLUXLESS DIE BONDING USING IN-SITU PLASMA TREATMENT AND APPARATUS FOR EFFECTING THE SAME
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United States of America
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Issued Date -
Dec 5, 2024
app pub date -
Jun 2, 2023
filing date -
Jun 2, 2023
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Abstract
A bonded assembly may be formed by providing at least a first packaging substrate in a low-oxygen ambient; providing at least a first semiconductor package in the low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient by directing at least one first plasma jet to first solder material portions bonded to the first semiconductor package; and bringing the first solder material portions onto, or in proximity to, first substrate-side bonding structures located on the first packaging substrate while the at least one first plasma jet is directed to the first solder material portions. The first substrate-side bonding structures are treated with the first plasma jet. The first semiconductor package is bonded to the first packaging substrate while, or after, the first substrate-side bonding structures are treated with the first plasma jet.
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