METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Dec 5, 2024
app pub date -
Jul 25, 2024
filing date -
Jul 25, 2024
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Abstract
In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.
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