METHOD TO INVESTIGATE A SEMICONDUCTOR SAMPLE LAYER BY LAYER AND INVESTIGATION DEVICE TO PERFORM SUCH METHOD
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United States of America
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Dec 5, 2024
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Aug 6, 2024
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Aug 6, 2024
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Abstract
A method includes preparing an initial layer of a semiconductor sample., and aligning a surface area of a region of interest volume of the prepared layer with an object field of an SEM. An electron energy of an electron beam of the SEM is adjusted. The region of interest volume is probed with the SEM within the object field. X-rays emanating from the aligned region of interest volume are detected. A detection signal is post-processed to deconvolute the detection signal into structured data attributed to the sample structure within the region of interest volume. A next layer to be investigated is prepared by FIB etching and the steps “preparing” to “post-processing” are repeated until the layer by layer investigation of a superimposed volume of interest of the sample is completed.
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