METHOD FOR FABRICATING MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America
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Issued Date -
Dec 5, 2024
app pub date -
Mar 13, 2024
filing date -
Mar 13, 2024
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Abstract
A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the first target pattern; performing optical proximity correction on the second target pattern to generate a final pattern; and fabricating the mask using the final pattern. Generating the second target pattern includes forming a recess extending inwardly and in a diagonal direction relative to the inner corner of the step portion; and forming a protrusion protruding outwardly and in the diagonal direction relative to the outer corner of the step portion.
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