SURFACE ACOUSTIC WAVE DEVICE INCLUDING IDT ELECTRODES HAVING METAL OXIDE LAYER FORMED THEREON AND METHOD FOR FABRICATING THE SAME
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United States of America
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Issued Date -
Nov 28, 2024
app pub date -
May 22, 2024
filing date -
May 22, 2024
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Abstract
Provided are a surface acoustic wave device including IDT electrodes having an oxide electrode layer formed therein, and a method for fabricating the same. The surface acoustic wave device include a piezoelectric substrate and a plurality of IDT electrodes formed on the piezoelectric substrate, wherein each of the plurality of IDT electrodes includes: a main electrode layer formed on the upper surface of the piezoelectric substrate; an upper electrode layer formed on the main electrode layer; and an oxide electrode layer formed on the upper surface of the upper electrode layer by oxidation of the upper electrode layer, and wherein the thickness (te) of each of the plurality of IDT electrodes satisfies 0.011≤to/te≤0.333 with respect to the thickness (to) of the oxide electrode layer.
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