SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America
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Nov 28, 2024
app pub date -
Jul 31, 2024
filing date -
Jul 31, 2024
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Abstract
A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.
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