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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
TAIWAN SEMICONDUCTOR MFG CO LTD	NO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• H03H:IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONA....

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
CHEN, Miin-Jang	Hsinchu, TW	66	230
# of filed Patents : 66 Total Citations : 230
CHENG, Po-Hsien	Hsinchu, TW	28	21
# of filed Patents : 28 Total Citations : 21
YIN, Yu-tung	Hsinchu, TW	7	11
# of filed Patents : 7 Total Citations : 11

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	May 28, 2028
7.5 Year Payment	$3600.00	$1800.00	$900.00	May 28, 2032
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Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2024/0395,933

FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS

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Abstract

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Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.

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Description

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