SEMICONDUCTOR DEVICE AND METHOD
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United States of America
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Issued Date -
Nov 28, 2024
app pub date -
Jul 31, 2024
filing date -
Jul 31, 2024
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Abstract
In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.
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