III-N SILICON SEMICONDUCTOR WAFER
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United States of America
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Nov 28, 2024
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Aug 5, 2024
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Aug 5, 2024
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Abstract
A III-N silicon semiconductor wafer having an upper layer region and a lower layer region, wherein the upper layer region has a nitride layer with a formed III-N layer, and the lower layer region includes a silicon layer. The semiconductor wafer has a total thickness of at least 1.2 mm and is disk-shaped, and the semiconductor wafer is divided along a total thickness into the upper layer region and the lower layer region. The upper layer region has a circumferential edge region, and the upper layer region has a first maximum diameter of at least 145 mm, and the upper layer region has a thickness greater than 30 μm and less than 950 μm. The lower layer region has a second maximum diameter, and a connection region is formed between the upper layer region and the lower layer region, wherein the connection region has a third diameter.
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