THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
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United States of America
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Nov 28, 2024
app pub date -
Jul 30, 2024
filing date -
Jul 30, 2024
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Abstract
A method includes following steps. A dielectric layer is formed over a substrate. A transition metal-containing layer is deposited on the dielectric layer. The transition metal-containing layer is patterned into a plurality of transition metal-containing pieces. The transition metal-containing pieces are sulfurized or selenized to form a plurality of semiconductor seeds. Semiconductor films are grown from semiconductor seeds. Transistors are formed on the semiconductor films.
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