THROUGH SILICON VIA WITH TEXTURED STRUCTURE AND FOOTING FEATURES
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Nov 28, 2024
app pub date -
Sep 26, 2023
filing date -
Sep 26, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a metal line over a first substrate, a second substrate over the metal line, and a through-via penetrating through the second substrate and landing on the metal line. The through-via includes a copper fill having at least 85% (111) crystal orientation. The through-via includes a top portion with a first top width over a bottom portion with a second top width that is smaller than the first top width, and the top portion includes a first bulk portion over a first footing feature. The first bulk portion has first sidewalls, the first footing feature has second sidewalls, and the second sidewalls slant inwards from the first sidewalls to narrow the through-via from the first top width of the top portion to the second top width of the bottom portion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully