METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Nov 28, 2024
app pub date -
Jul 30, 2024
filing date -
Jul 30, 2024
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Abstract
A method for fabricating a semiconductor device is provided. The method includes coating a photoresist film over a target layer over a semiconductor substrate; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer along a direction tilted with respect to a normal direction of the semiconductor substrate, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.
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