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Abstract

A mask blank substrate has first and second main surfaces of 152 mm×152 mm-square and 6.35 mm-thick, in which in a pseudo TTV map obtained by adding up maps of the first and second main surfaces, a difference between highest and lowest heights of a TTV1 map, is ≤35 nm, excluding a primary component when a plane function is derived, and a difference between highest and lowest heights of a TTV2 map, is ≤25 nm, excluding primary and secondary components when a curved-surface function is derived, in fitting of the pseudo TTV map within a cross-shaped region formed in a case where a first rectangular region is overlapped with a second rectangular region, the first and second rectangular regions of 132 mm×104 mm being orthogonal to each other, and parallel to four sides of the main surfaces centered at intersections of diagonal lines of the main surfaces.

First Claim