METHOD FOR FORMING CARBON-CONTAINING FILM, AND METHOD FOR FORMING HARD MASK USING THE CARBON-CONTAINING FILM

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United States of America

APP PUB NO 20240392432A1
SERIAL NO

18672092

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Abstract

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A method for forming a carbon-containing film includes: preparing a substrate on which a metal-containing film is formed; performing a modification process of modifying a surface of the metal-containing film by supplying a silicon-containing gas to the substrate and by exposing the substrate to the silicon-containing gas during a first period of time; and forming the carbon-containing film having a film stress of 1 GPa or more on the modified surface of the substrate by exposing the substrate subjected to the modification process to plasma of a processing gas including a carbon-containing gas.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FUJII, Yasushi Nirasaki City, JP 58 634
KANEKO, Miyako Nirasaki City, JP 23 190
MITSUNARI, Tadashi Nirasaki City, JP 14 9

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