PHASE CHANGE MEMORY ELEMENT PARTICULARLY SUITABLE FOR EMBEDDED AND AUTOMOTIVE APPLICATIONS
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Nov 21, 2024
app pub date -
May 9, 2024
filing date -
May 9, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A phase change memory element includes a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and is made of a GST alloy. An average percentage of germanium in the GST alloy is higher than 50%. The memory region has a storage portion formed by a GST alloy that includes nitrogen in an electrically relevant amount. The GST alloy of the storage portion has a percentage of germanium inclusively between 60% and 68%; a percentage of antimony inclusively between 9% and 5%; a percentage of tellurium inclusively between 18% and 10%; and a percentage of nitrogen inclusively between 5% and 25%.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully