MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME
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United States of America
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Issued Date -
Nov 21, 2024
app pub date -
Jul 29, 2024
filing date -
Jul 29, 2024
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Abstract
A memory cell includes a dielectric structure, a storage element structure, and a top electrode. The storage element structure is disposed in the dielectric structure, and the storage element structure includes a first portion and a second portion. The first portion includes a first side and a second side opposite to the first side, where a width of the first side is less than a width of the second side. The second portion is connected to the second side of the first portion, where a width of the second portion is greater than the width of the first side. The top electrode is disposed on the storage element structure, where the second portion is disposed between the first portion and the top electrode.
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